ALD System ALD System

Atomic Layer Deposition (ALD) is a process coating layer by layer on 3D structure. Adding preposed objects step by step in the vacuum chamber during process cycle to accurately control the thickness and quality of thin film. Plasma Enhanced Atomic Layer Deposition (PEALD) is an advanced method to enhance the performance of ALD through plasma gaseous atoms replacing water.

Basing on years of experience in research, development and manufacture of PECVD and ICPECVD system, and combining its PTSA technology, SENTECH published its first PEALD system. And in new ALD systems, SENTECH ellipsometers are used to monitor the operation and deposition processes of thermal assistance and plasma assistance.

SENTECH offers leading edge ultra-fast in-situ monitoring of layer-by-layer film growth using the ALD Real Time Monitor as well as wide range spectroscopic ellipsometry.

The first PEALD system has been used in TU Braunschweig for the growth of oxidation film, like Al2O3_, ZnO and so on, with ultra-high uniformity and density.

During the deposition of Al2O3, there is an oxygen atomic reaction of TMA plasma, and the temperature of substrate ranges from 80 ℃ to 200 ℃. The PEALD thin film features high uniformity and small changes in refractive index.