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SiC Crystral Growth SiC Crystal Growth

The Globally First Furnace for 200mm SiC Crystal Growth

  1. Description
  2. Specifications
  3. Consultation

Aymont now produces and sells its first commercial crystal growing furnace which supports the growth of 200mm SiC monocrystalline pillar and batch-production of 150mm and 200mm wafers. SP-150 growth furnace is mainly used to produce 150mm SiC wafer, and the growth of wafer with maximum diameter at 200mm is compatible. It is the best solution to the batch-production of SiC.

 

Main Characteristics

SiC Growth Furnace in Inductance-Heating PVT

Quartz Tube with Dual-Walled Water-Cooling 

Commercial Training for 2", 100mm or 150mm Wafer Growth Processes

Control of Pyrometer and Power, Guarantee of the Stale Operation

Automatic PLC Control with Functions Like Process, Touch Screen and Load-Lock/Warning

Remote Supervisor and Control

Smallest Space

 

Application Area

Power Electronics (Schottky Barrier Diode/MOSFETs/JFETs/IGBT/BJTs/Thyristor/Diode of SiC PN junction)

Compensation of Power Factor, Solar Inverter, Electromobile

Substrate Wafer, GN Group HB-LEDDs, Display Screen, General Lighting

GaN-Group High Frequency Devices

400-615-4535
400-615-4535