Plasma Etching Plasma Etching

ICP-RIE SI 500

Low damage etching

Due to low ion energy and narrow ion energy distribution, low damage etching and nano structuring can be performed with our icp plasma etching tools.

Simple high rate etching

High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.

Inhouse ICP plasma source

The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems. The PTSA source generates homogeneous plasma with high ion density and low ion energy. It features high coupling efficiency and very good ignition behavior for processing of a large variety of materials and structures.

Dynamic temperature control

Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching. The ICP substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from -150 °C up to +400 °C.

SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 500 ICP for plasma etching is available as process module on cluster configuration as well.